BC640BU Fairchild Semiconductor, BC640BU Datasheet - Page 3

• Manufacturer Part Number: BC640BU
• Description: TRANSISTOR PNP 80V 1A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BC640BU

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BC640 Rev. C3
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 3. Base-Emitter Saturation Voltage
Figure 5. Collector Output Capacitance
-0.01
-500
-400
-300
-200
-100
100
-0.1
-10
10
-1
1
-0
-1
-1
-0
Collector-Emitter Saturation Voltage
V
V
CB
-10
CE
[V], COLLECTOR-BASE VOLTAGE
I
[V], COLLECTOR-EMITTER VOLTAGE
C
V
[mA], COLLECTOR CURRENT
CE
V
(sat)
BE
(sat)
-10
-20
-10
I
B
= - 1.8 mA
I
B
= - 1.6 mA
I
B
-30
= - 1.4 mA
I
B
-100
= - 1.2 mA
I
B
I
= - 1.0 mA
B
I
= - 0.8 mA
B
= - 0.6 mA
f=1MHz
I
I
-40
B
B
I
C
= - 0.4 mA
= - 0.2 mA
= 10 I
B
-100
-1000
-50
3
Figure 2. DC Current Gain
Figure 4. Base-Emitter On Voltage
1000
100
-1000
10
-100
-10
-1
-1
-0.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-10
-0.4
-0.6
-100
-0.8
V
CE
= - 2V
V
-1.0
CE
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= - 2V
-1000
-1.2