MMBT3906-7 Diodes Inc, MMBT3906-7 Datasheet - Page 2
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MMBT3906-7
Manufacturer Part Number
MMBT3906-7
Description
TRANS PNP 40V 300MW SMD SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBT3906-7-F.pdf
(4 pages)
Specifications of MMBT3906-7
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
300mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
IMBT3906
IMBT3906DITR
MMBT3906DITR
MMBT3906TR
MMBT3906TR
IMBT3906DITR
MMBT3906DITR
MMBT3906TR
MMBT3906TR
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Manufacturer
Quantity
Price
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Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT3906
Document number: DS30059 Rev. 15 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
400
250
350
300
200
150
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
A
50
Characteristic
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CEX
CBO
h
NF
2 of 4
I
h
h
h
f
t
t
BL
obo
t
t
FE
ibo
oe
ie
re
fe
T
d
s
r
f
-0.65
Min
-5.0
100
100
250
-40
-40
2.0
0.1
3.0
60
80
60
30
0.001
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.01
0.1
1
0.1
Single Non-repetitive Pulse
T = 25°C
DUT mounted onto 1xMRP
FR-4 board
A
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
V , COLLECTOR-EMITTER VOLTAGE (V)
-50
-50
-50
4.5
4.0
10
12
10
60
35
35
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
x 10
Unit
MHz
nA
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
1
-4
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CB
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= -10μA, I
= -10mA, I
= -10μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -50mA, I
= -10mA, I
= -50mA, I
Pw = 100ms
= 1.0kΩ, f = 1.0kHz
= I
DC
= -30V, V
= -30V, I
= -30V, V
= 10V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
= -3.0V, I
= -3.0V, I
B2
= 0.5V, I
= -1.0mA
Test Condition
10
C
E
C
B
E
B
B
B
C
B
C
C
C
EB(OFF)
EB(OFF)
= 0
= 0
= 1.0mA,
CE
= -1.0mA
= 0
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
= 0
= -100μA,
= -10mA,
= -10mA,
B1
= -1.0V
MMBT3906
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0mA
Pw = 10ms
= -3.0V
= -3.0V
© Diodes Incorporated
September 2009
E
C
100
= 0
= 0