MAX3205EATE Maxim Integrated Products, MAX3205EATE Datasheet - Page 4

• Manufacturer Part Number: MAX3205EATE
• Description: TVS Diodes - Transient Voltage Suppressors
• Manufacturer: Maxim Integrated Products

Specifications of MAX3205EATE

• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 3 mm W x 3 mm L x 0.73 mm H
• Package / Case: TQFN-16 EP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The MAX3205E/MAX3207E/MAX3208E low-capacitance,
±15kV ESD-protection diode arrays with an integrated
transient voltage suppressor (TVS) clamp are suitable for
high-speed and general-signal ESD protection. Low
input capacitance makes these devices ideal for ESD
protection of signals in HDTV, PC monitors (DVI, HDMI),
PC peripherals (FireWire, USB 2.0), server interconnect
(PCI Express, InfiniBand), datacom, and interchassis
interconnect. Each channel consists of a pair of diodes
that steer ESD current pulses to V
MAX3207E, MAX3208E, and MAX3205E are two, four,
and six channels (see the Functional Diagram ).
The MAX3205E/MAX3207E/MAX3208E are designed to
work in conjunction with a device’s intrinsic ESD pro-
tection. The MAX3205E/MAX3207E/MAX3208E limit the
Dual, Quad, and Hex High-Speed
Differential ESD-Protection ICs
4
_______________________________________________________________________________________
I/O1
MAX3207E
V
GND
CC
I/O2
Detailed Description
I/O1
I/O2
CC
or GND. The
MAX3208E
GND
V
CC
I/O3
I/O4
excursion of the ESD event to below ±25V peak voltage
when subjected to the Human Body Model waveform.
When subjected to the IEC 61000-4-2 waveform and
Contact Discharge, the peak voltage is limited to ±60V.
The peak voltage is limited to ±100V when subjected to
Air-Gap Discharge. The device protected by the
MAX3205E/MAX3207E/MAX3208E must be able to
withstand these peak voltages, plus any additional volt-
age generated by the parasitic of the board.
A TVS is integrated into the MAX3205E/MAX3207E/
MAX3208E to help clamp ESD to a known voltage. This
helps reduce the effects of parasitic inductance on the
V
ESD event. For the lowest possible clamp voltage dur-
ing an ESD event, placing a 0.1µF capacitor as close to
V
CC
CC
as possible is recommended.
rail by clamping V
I/O1
I/O2
I/O3
CC
Functional Diagram
to a known voltage during an
MAX3205E
GND
V
CC
I/O4
I/O5
I/O6