BC817,215 NXP Semiconductors, BC817,215 Datasheet - Page 5
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BC817,215
Manufacturer Part Number
BC817,215
Description
TRANSISTOR NPN 500MA 45V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16W115.pdf
(19 pages)
Specifications of BC817,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
NPN
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933589520215::BC817 T/R::BC817 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC817,215
Manufacturer:
NXP Semiconductors
Quantity:
20 000
Part Number:
BC817,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 8.
T
[1]
[2]
BC817_BC817W_BC337_6
Product data sheet
Symbol
I
I
h
h
V
V
C
f
CBO
EBO
T
amb
FE
FE
CEsat
BE
c
Pulse test: t
V
= 25
BE
decreases by approximately 2 mV/K with increasing temperature.
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
Rev. 06 — 17 November 2009
Conditions
I
I
T
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
E
C
j
= 0 A; V
= 0 A; V
= 150 °C
= i
= 0 A; V
= 100 mA; V
= 500 mA; V
= 500 mA; I
= 500 mA; V
= 10 mA; V
e
= 0 A; V
CB
CB
EB
= 20 V
= 20 V;
= 5 V
CE
B
CB
CE
CE
CE
= 50 mA
= 5 V;
= 10 V;
= 1 V
= 1 V
= 1 V
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
[1]
[1]
[1]
[2]
Min
-
-
-
100
100
160
250
40
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
3
-
© NXP B.V. 2009. All rights reserved.
Max
100
5
100
600
250
400
600
-
700
1.2
-
-
Unit
nA
μA
nA
mV
V
pF
MHz
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