BC807-40W,115 NXP Semiconductors, BC807-40W,115 Datasheet - Page 6
![TRANSISTOR PNP 500MA 45V SOT-323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BC807-40W,115
Manufacturer Part Number
BC807-40W,115
Description
TRANSISTOR PNP 500MA 45V SOT-323
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-25215.pdf
(19 pages)
Specifications of BC807-40W,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
80MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100mA, 1V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
200 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
250
Frequency (max)
80MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934024260115::BC807-40W T/R::BC807-40W T/R
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 1.
Fig 3.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
300
200
100
−10
0
V
Selection -16: DC current gain as a function of
collector current; typical values
V
Selection -40: DC current gain as a function of collector current; typical values
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −1 V
= −1 V
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
(1)
(2)
(3)
−10
h
FE
800
600
400
200
−10
−10
0
2
−1
I
006aaa119
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 2.
BC807; BC807W; BC327
h
(1) T
(2) T
(3) T
FE
45 V, 500 mA PNP general-purpose transistors
600
400
200
−10
−10
0
V
Selection -25: DC current gain as a function of
collector current; typical values
2
−1
amb
amb
amb
CE
I
006aaa121
C
(mA)
= −1 V
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa120
C
(mA)
−10
3
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