BC817-16W,135 NXP Semiconductors, BC817-16W,135 Datasheet - Page 7
![TRANSISTOR NPN 500MA 45V SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BC817-16W,135
Manufacturer Part Number
BC817-16W,135
Description
TRANSISTOR NPN 500MA 45V SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16215.pdf
(19 pages)
Specifications of BC817-16W,135
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934021920135
BC817-16W /T3
BC817-16W /T3
BC817-16W /T3
BC817-16W /T3
NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 4.
Fig 6.
V
BEsat
(V)
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
−1
1
10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
−1
C
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
1
(1)
(2)
(3)
10
V
BEsat
(V)
10
10
−1
10
1
10
2
−1
I
006aaa134
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
(1)
(2)
(3)
10
Fig 5.
V
BC817; BC817W; BC337
BEsat
(V)
10
(1) T
(2) T
(3) T
45 V, 500 mA NPN general-purpose transistors
10
−1
10
1
10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
−1
C
amb
amb
amb
I
/I
006aaa136
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
10
1
3
(1)
(2)
(3)
10
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa135
C
(mA)
10
3
7 of 19