BCW89,215 NXP Semiconductors, BCW89,215 Datasheet - Page 3

• Manufacturer Part Number: BCW89,215
• Description: TRANSISTOR PNP 60V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW89,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933495320215; BCW89 T/R; BCW89 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board
CHARACTERISTICS
T
1999 Apr 15
R
I
I
h
V
V
V
C
f
F
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
PNP general purpose transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= −10 μA; V
= −2 mA; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= −2 mA; V
= −10 mA; V
= −200 μA; V
e
.
= 0; V
CB
CB
EB
note 1
3
= −20 V
= −20 V; T
= −5 V
CONDITIONS
CB
CE
CE
B
B
B
B
CE
CE
= −10 V; f = 1 MHz
CE
= −0.5 mA
= −2.5 mA
= −0.5 mA
= −2.5 mA
= −5 V
= −5 V
CONDITIONS
= −5 V
= −5 V; f = 100 MHz −
= −5 V; R
j
= 100 °C
S
= 2 kΩ;
−
−
−
−
120
−
−
−
−
−600
−
−
MIN.
VALUE
500
−
−
−
90
−
−80
−150
−720
−810
−
4.5
150
−
TYP.
Product data sheet
−100
−10
−100
−
260
−300
−
−
−
−750
−
−
10
BCW89
MAX. UNIT
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB