BC807-40,215 NXP Semiconductors, BC807-40,215 Datasheet - Page 4

• Manufacturer Part Number: BC807-40,215
• Description: TRANS PNP GP 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC807-40,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 250
• Frequency (max): 80MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1629-2; 933628580215; BC807-40 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC807_BC807W_BC327_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
BC807
BC807W
BC327
BC807
BC807W
BC327
Rev. 06 — 17 November 2009
Conditions
T
T
T
BC807; BC807W; BC327
amb
amb
amb
open emitter
open collector
Conditions
open base;
I
T
T
T
C
45 V, 500 mA PNP general-purpose transistors
amb
amb
amb
= 10 mA
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
-
-
-
-
-
-
-
−65
-
−65
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
−50
−45
−5
−500
−1
−200
250
200
625
+150
150
+150
Max
500
625
200
Unit
V
V
V
A
°C
°C
°C
mA
mA
mW
mW
mW
Unit
K/W
K/W
K/W
4 of 19