MMBTA92,215 NXP Semiconductors, MMBTA92,215 Datasheet - Page 3

• Manufacturer Part Number: MMBTA92,215
• Description: TRANS PNP 300V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBTA92,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Transistor Type: PNP
• Frequency - Transition: 50MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055964215::MMBTA92 T/R::MMBTA92 T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 16
R
I
I
h
V
V
C
f
amb
CBO
EBO
T
FE
CEsat
BEsat
th(j-a)
c
PNP high-voltage transistor
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
p
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
300 s;
PARAMETER
0.02.
PARAMETER
I
I
V
I
I
I
f = 1 MHz
I
f = 100 MHz
E
C
C
C
E
C
3
CE
I
I
I
= 0; V
= i
= 0; V
= 20 mA; I
= 20 mA; I
= 10 mA; V
C
C
C
= 10 V; note 1
= 1 mA
= 10 mA
= 30 mA
e
note 1
CONDITIONS
= 0; V
CB
EB
CONDITIONS
= 200 V
= 3 V
CB
B
B
CE
= 20 V;
= 2 mA
= 2 mA
= 20 V;
25
40
25
50
MIN.
VALUE
500
6
Product specification
250
100
500
900
MAX.
MMBTA92
UNIT
K/W
nA
nA
mV
mV
pF
MHz
UNIT