BCP55-16,115 NXP Semiconductors, BCP55-16,115 Datasheet - Page 13
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BCP55-16,115
Manufacturer Part Number
BCP55-16,115
Description
TRANSISTOR NPN 60V 1A SOT-223
Manufacturer
NXP Semiconductors
Datasheet
1.BCP55-16115.pdf
(15 pages)
Specifications of BCP55-16,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
960mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
960 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917230115
BCP55-16 T/R
BCP55-16 T/R
BCP55-16 T/R
BCP55-16 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP55-16,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
10. Revision history
Table 10.
BC637_BCP55_BCX55_7
Product data sheet
Document ID
BC637_BCP55_BCX55_7
Modifications:
BC637_BCP55_BCX55_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
Revision history
Release date
20070625
20050218
20011010
20030206
20011010
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Product
Section 1.2
Section 1.3
Table 2 “Quick reference
Table 2 “Quick reference
Figure 2
Table 6 “Limiting
Table 6 “Limiting
Table 6 “Limiting
Table 7 “Thermal
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Table 9 “Packing
Section 11 “Legal
4: Z
4: t
5: added
6: Z
6: t
7: added
8: Z
8: t
9: added
11: amended
and 3: amended
p
p
p
th
th
th
parameter redefined to pulse duration
parameter redefined to pulse duration
parameter redefined to pulse duration
“Features”: amended
“Applications”: amended
Data sheet status
Product data sheet
redefined to Z
redefined to Z
redefined to Z
Product data sheet
Product specification
Product specification
Product specification
overview”: amended
values”: I
values”: I
values”: P
Rev. 07 — 25 June 2007
methods”: new packing method for BCX55 added
characteristics”: R
information”: updated
data”: I
data”: I
C
CM
th(j-a)
th(j-a)
th(j-a)
tot
parameter redefined to collector current
condition added
values for BCP55 and BCX55 adapted
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
C
CM
parameter redefined to collector current
condition added
th(j-a)
BC637; BCP55; BCX55
values for BCP55 and BCX55 rounded
Change notice
-
CPCN200405029
-
-
-
60 V, 1 A NPN medium power transistors
Supersedes
BC637_BCP55_BCX55_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
BC635_637_639_3
BCP54_55_56_4
BCX54_55_56_3
© NXP B.V. 2007. All rights reserved.
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