BCX54-10,115 NXP Semiconductors, BCX54-10,115 Datasheet - Page 9

• Manufacturer Part Number: BCX54-10,115
• Description: TRANSISTOR NPN 45V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX54-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1250 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663070115; BCX54-10 T/R; BCX54-10 T/R

NXP Semiconductors
7. Characteristics
BC635_BCP54_BCX54_7
Product data sheet
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, mounting pad for collector 6 cm
typical values
5
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
4
Table 8.
T
[1]
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25 C unless otherwise specified.
10
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
3
h
h
p
FE
FE
selection -10
selection -16
300 s; = 0.02.
2
10
2
Rev. 07 — 4 June 2007
10
Conditions
V
V
T
V
V
V
I
V
V
f = 1 MHz
V
f = 100 MHz
C
1
j
CB
CB
EB
CE
CE
CE
CB
CE
I
I
I
I
I
= 150 C
= 500 mA; I
C
C
C
C
C
= 30 V; I
= 30 V; I
= 5 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BC635; BCP54; BCX54
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
45 V, 1 A NPN medium power transistors
B
= i
= 0 A
= 0 A;
= 50 mA
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
100
10
Typ
-
-
-
-
-
-
-
-
-
-
6
180
2
© NXP B.V. 2007. All rights reserved.
t
p
006aaa816
(s)
Max
100
10
100
-
250
-
160
250
500
1
-
-
10
3
Unit
nA
nA
mV
V
pF
MHz
A
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