BC869,135 NXP Semiconductors, BC869,135 Datasheet
BC869,135
Specifications of BC869,135
BC869 /T3
BC869 /T3
Related parts for BC869,135
BC869,135 Summary of contents
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DATA SHEET dbook, halfpage BC869 PNP medium power transistor Product data sheet Supersedes data of 2003 Dec 02 DISCRETE SEMICONDUCTORS M3D109 2004 Nov 08 ...
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... NXP Semiconductors PNP medium power transistor FEATURES • High current • Three current gain selections • 1.2 W total power dissipation. APPLICATIONS • Linear voltage regulators • High side switch • Supply line switch • MOSFET driver • Audio (pre-) amplifier. PRODUCT OVERVIEW ...
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... NXP Semiconductors PNP medium power transistor ORDERING INFORMATION TYPE NUMBER NAME BC869 SC-62 BC869-16 BC869-25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current ...
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... NXP Semiconductors PNP medium power transistor 1.6 handbook, halfpage P tot (W) (1) 1.2 (2) 0.8 (3) 0 (1) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB mounting pad for collector. (3) Standard footprint. Fig.1 Power derating curves. THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient ...
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... NXP Semiconductors PNP medium power transistor handbook, full pagewidth Z th (K/W) ( (2) (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 −1 10 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.2 Transient thermal impedance as a function of pulse time; typical values. ...
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... NXP Semiconductors PNP medium power transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V base-emitter voltage BE C collector capacitance c f transition frequency T 2004 Nov 08 CONDITIONS = − ...
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... NXP Semiconductors PNP medium power transistor −2.4 handbook, halfpage I C (A) −2.0 −1.6 −1.2 −0.8 −0.4 0 −1 −2 0 BC869-16. = −18 mA. = −10.8 mA. ( −16.2 mA. = −9.0 mA. ( −14.4 mA. = −7.2 mA. ( −12.6 mA. = −5.4 mA. ( Fig.5 Collector current as a function of collector-emitter voltage; typical values handbook, halfpage ...
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... NXP Semiconductors PNP medium power transistor −2.4 handbook, halfpage I C (A) −2.0 −1.6 −1.2 −0.8 −0.4 0 −1 −2 0 BC869-25. = −12 mA. = −7.2 mA. ( −10.8 mA. = −6.0 mA. ( −9.6 mA. = −4.8 mA. ( −8.4 mA. = −3.6 mA. ( Fig.9 Collector current as a function of collector-emitter voltage; typical values handbook, halfpage ...
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... NXP Semiconductors PNP medium power transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Nov scale 0.44 4 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...