BSP50,115 NXP Semiconductors, BSP50,115 Datasheet

TRANS NPN 80V 1000MA SOT223

BSP50,115

Manufacturer Part Number
BSP50,115
Description
TRANS NPN 80V 1000MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BSP50,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.25W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
60V
Emitter-base Voltage
5V
Base-emitter Saturation Voltage (max)
1.9V
Collector-emitter Saturation Voltage
1.3V
Collector Current (dc) (max)
1A
Dc Current Gain
1000
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933986330115
BSP50 T/R
BSP50 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP50,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1997 Apr 22
DATA SHEET
handbook, halfpage
BSP50; BSP51; BSP52
NPN Darlington transistors
M3D087
DISCRETE SEMICONDUCTORS
1999 Apr 23

Related parts for BSP50,115

BSP50,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage BSP50; BSP51; BSP52 NPN Darlington transistors Product data sheet Supersedes data of 1997 Apr 22 DISCRETE SEMICONDUCTORS M3D087 1999 Apr 23 ...

Page 2

... NXP Semiconductors NPN Darlington transistors FEATURES • High current (max • Low voltage (max • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) ...

Page 3

... NXP Semiconductors NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to solder point th j-s Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook“ ...

Page 4

... NXP Semiconductors NPN Darlington transistors 5000 handbook, full pagewidth h FE 4000 3000 2000 1000 0 − handbook, full pagewidth = 200 μ μ Ω kΩ kΩ −1 10 Ω. Oscilloscope: input impedance Z i 1999 Apr Fig.2 DC current gain; typical values (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Apr scale 0.32 6.7 3 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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