BCV28,115 NXP Semiconductors, BCV28,115 Datasheet - Page 5

• Manufacturer Part Number: BCV28,115
• Description: TRANS DARL PNP 30V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCV28,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933871580115; BCV28 T/R; BCV28 T/R

NXP Semiconductors
2004 Dec 06
handbook, full pagewidth
PNP Darlington transistors
V
100000
80000
60000
40000
20000
CE
h FE
= −5 V.
0
−1
Fig.2 DC current gain; typical values.
−10
5
−10
2
I C (mA)
BCV28; BCV48
Product data sheet
MGD836
−10
3