BCV29,115 NXP Semiconductors, BCV29,115 Datasheet - Page 5
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BCV29,115
Manufacturer Part Number
BCV29,115
Description
TRANS DARL NPN 30V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BCV49135.pdf
(8 pages)
Specifications of BCV29,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1.3W
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933871570115
BCV29 T/R
BCV29 T/R
BCV29 T/R
BCV29 T/R
NXP Semiconductors
2004 Dec 06
handbook, full pagewidth
NPN Darlington transistors
V
80000
60000
40000
20000
CE
h FE
= 2 V.
10
0
−1
1
Fig.2 DC current gain; typical values.
5
10
10
2
BCV29; BCV49
I C (mA)
Product data sheet
MGD837
10
3