MSD1819A-RT1G ON Semiconductor, MSD1819A-RT1G Datasheet
MSD1819A-RT1G
Manufacturer Part Number
MSD1819A-RT1G
Description
TRANS NPN GP BIPO 50V SOT-323
Manufacturer
ON Semiconductor
Datasheet
1.MSD1819A-RT1G.pdf
(4 pages)
Specifications of MSD1819A-RT1G
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MSD1819A-RT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MSD1819A-RT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MSD1819A- - RT1
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
MAXIMUM RATINGS
Semiconductor Components Industries, LLC, 2010
October, 2010 - - Rev. 7
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Collector Current -- Peak
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
This NPN Silicon Epitaxial Planar Transistor is designed for general
Compliant
High h
Low V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
minimum recommended footprint.
FE
CE(sat)
Characteristic
, 210 - - 460
Rating
, < 0.5 V
Machine Model > 400 V
(T
A
= 25C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
I
T
C(P)
P
T
I
stg
C
D
J
--55 to +150
Value
Max
100
200
150
150
7.0
60
50
1
mAdc
mAdc
Unit
Unit
mW
Vdc
Vdc
Vdc
C
C
†For information on tape and reel specifications,
MSD1819A--RT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
Device
upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
BASE
ZR
M
G
MARKING DIAGRAM
http://onsemi.com
1
SC- -70 (SOT- -323)
1
= Device Code
= Date Code*
= Pb--Free Package
1
COLLECTOR
CASE 419
(Pb--Free)
STYLE 3
SOT--323
Package
2
SC--70/
ZR M G
3
Publication Order Number:
G
3
EMITTER
MSD1819A- -RT1/D
3000/Tape & Reel
2
Shipping
†
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MSD1819A-RT1G Summary of contents
Page 1
... MSD1819A- - RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features High h , 210 - - 460 FE ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (I C Collector-Base Breakdown Voltage ( mAdc Emitter-Base Breakdown Voltage ( mAdc Collector-Base Cutoff Current ( Vdc Collector-Emitter Cutoff Current (V = ...
Page 3
I , COLLECTOR CURRENT (A) C Figure 5. Base Emitter Turn- -On Voltage vs. Collector Current (pF) ibo ...
Page 4
... E STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MSD1819A- -RT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 ...