2N3906RLRMG ON Semiconductor, 2N3906RLRMG Datasheet - Page 6

• Manufacturer Part Number: 2N3906RLRMG
• Description: TRANS SS PNP GP 40V 200MA TO-92
• Manufacturer: ON Semiconductor
• Type: PNPr

Specifications of 2N3906RLRMG

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Package: 3TO-92
• Supplier Package: TO-92
• Pin Count: 3
• Minimum Dc Current Gain: 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
• Maximum Operating Frequency: 250(Min) MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 0.85@1mA@10mA|0.95@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@1mA@10mA|0.4@5mA@50mA V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
I
C
T
= 1.0 mA
J
= 25°C
2.0
0.2
0.02
5.0
Figure 15. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.3
0.03
10
0.5
V
0.05
20
BE(sat)
V
CE(sat)
0.7
@ I
0.07
@ I
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
V
C
B
BE
/I
50
Figure 14. Collector Saturation Region
= 10
10 mA
B
T
0.1
J
@ V
= 10
= +125°C
CE
Figure 13. DC Current Gain
= 1.0 V
100
2.0
- 55°C
+25°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
6
0.3
5.0
30 mA
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
0
7.0
0.5
0
q
VC
10
20
0.7
FOR V
Figure 16. Temperature Coefficients
q
VB
40
1.0
CE(sat)
FOR V
I
C
20
, COLLECTOR CURRENT (mA)
60
BE(sat)
30
80
2.0
100
+25°C TO +125°C
- 55°C TO +25°C
50
3.0
120
70
+25°C TO +125°C
100 mA
- 55°C TO +25°C
140
V
5.0
100
CE
T
= 1.0 V
160
J
= 25°C
7.0
180
200
10
200