BC 807-25W E6327 Infineon Technologies, BC 807-25W E6327 Datasheet - Page 3
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BC 807-25W E6327
Manufacturer Part Number
BC 807-25W E6327
Description
TRANSISTOR PNP AF 45V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BC_807-25_B5003.pdf
(11 pages)
Specifications of BC 807-25W E6327
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC80725WE6327
BC80725WE6327XT
SP000014779
BC80725WE6327XT
SP000014779
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
1
C
C
C
C
E
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, I
= 4 V, I
= 25 V, I
= 25 V, I
C
C
E
E
B
B
E
E
= 0
= 0 , BC807...
= 0 , BC808...
= 0
B
B
= 0 , BC807...
= 0 , BC808...
= 0
= 0 , T
CE
CE
CE
CE
1)
= 50 mA
= 50 mA
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V
A
= 150 °C
FE
FE
FE
-grp. 16
-grp. 25
grp. 40
1)
A
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
min.
100
160
250
40
45
25
50
30
5
-
-
-
-
-
Values
BC807.../BC808...
160
250
350
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
250
400
630
100
0.1
0.7
1.2
50
2007-06-08
-
-
-
-
-
-
Unit
V
µA
nA
-
V