BC846BLT1G ON Semiconductor, BC846BLT1G Datasheet

TRANS NPN LP 100MA 65V SOT23

BC846BLT1G

Manufacturer Part Number
BC846BLT1G
Description
TRANS NPN LP 100MA 65V SOT23
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets
1.BC846ALT1G.pdf (13 pages)
2.BC847BLT1G.pdf (5 pages)

Specifications of BC846BLT1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
225 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
100 mA
Current, Gain
450
Frequency
100 MHz
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
65 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
65 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
65V
Collector-base Voltage
80V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC846BLT1GOSTR

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Part Number
Manufacturer
Quantity
Price
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BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•
•
•
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 10
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
ESD Rating
Compliant
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: >4000 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1)
T
Derate above 25°C
Junction−to−Ambient (Note 1)
Alumina Substrate (Note 2)
T
Derate above 25°C
Junction−to−Ambient (Note 2)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
− Machine Model: >400 V
Rating
BC847, BC850
BC848, BC849
BC847, BC850
BC848, BC849
BC847, BC850
BC848, BC849
BC846
BC846
BC846
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to
Value
+150
Max
100
225
556
300
417
6.0
6.0
5.0
1.8
2.4
65
45
30
80
50
30
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
XX
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
1
= Device Code
= Date Code*
= Pb−Free Package
1
CASE 318
STYLE 6
SOT−23
XX M G
COLLECTOR
G
Publication Order Number:
2
EMITTER
3
2
3
BC846ALT1/D

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BC846BLT1G Summary of contents

Page 1

BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage BC846A mA) BC847A,B,C, BC850B,C C BC848A,B,C, BC849B,C Collector −Emitter Breakdown Voltage BC846A mA BC847A,B,C BC850B BC848A,B,C, BC849B,C Collector −Base Breakdown ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 ...

Page 4

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 5. Collector Saturation Region 10 ...

Page 5

I , COLLECTOR CURRENT (A) C Figure 9. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 ...

Page 6

0 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 13. Collector Saturation Region ...

Page 7

BC847B, BC848B, BC849B, BC850B 600 150°C 500 400 25°C 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 17. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 ...

Page 8

BC847B, BC848B, BC849B, BC850B 2 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 21. ...

Page 9

I , COLLECTOR CURRENT (A) C Figure 25. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 ...

Page 10

BC847C, BC848C, BC849C, BC850C 2 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 29. ...

Page 11

S 0.1 Thermal Limit 0.01 0.001 COLLECTOR EMITTER VOLTAGE (V) CE Figure 33. Safe Operating Area for BC846A, BC846B 1 0.1 0.01 0.001 0.1 BC848A, BC848B, BC848C, BC849B, BC849C 1 ...

Page 12

... ORDERING INFORMATION Device BC846ALT1G BC846ALT3G BC846BLT1G BC846BLT3G BC847ALT1G BC847ALT3G BC847BLT1G BC847BLT3G BC847CLT1G BC847CLT3G BC848ALT1G BC848BLT1G BC848BLT3G BC848CLT1G BC848CLT3G BC849BLT1G BC849BLT3G BC849CLT1G BC849CLT3G BC850BLT1G BC850CLT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D ...

Page 13

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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