BC846BWT1G ON Semiconductor, BC846BWT1G Datasheet - Page 2

• Manufacturer Part Number: BC846BWT1G
• Description: TRANSISTOR NPN 65V 100MA SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC846BWT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 65V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BWT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure (I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
= 1.0 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, V
C
EB
CE
= 0.2 mA, V
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
(I
CB
(V
C
C
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
CE
= 30 V, T
= 30 V)
= 5.0 Vdc, R
(I
(I
C
C
C
Characteristic
= 100 mA, I
= 10 mA, I
= 100 mA, I
CE
A
CE
C
= 150°C)
= 5.0 V)
= 10 mA, I
(T
= 5.0 V)
A
S
= 25°C unless otherwise noted)
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
B
B
B
= 0.5 mA)
= 5.0 mA)
= 5.0 mA)
B
BC846 Series
BC846 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
= 0.5 mA)
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2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(BR)CES
I
CE(sat)
BE(sat)
C
BE(on)
h
CBO
NF
f
obo
FE
T
Min
200
420
580
100
110
6.0
6.0
5.0
65
45
30
80
50
30
80
50
30
−
−
−
−
−
−
−
−
−
−
−
−
Typ
150
270
180
290
520
660
0.7
0.9
90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
220
450
800
700
770
5.0
0.6
4.5
15
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
mV
nA
mA
pF
dB
V
V
V
V
V
V
−