MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT5087LT1G
• Description: TRANS GP SS PNP LN 50V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Noiser

Specifications of MMBT5087LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -50 mA
• Current, Gain: 250
• Frequency: 40 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -50 V
• Voltage, Collector To Base: -50 V
• Voltage, Collector To Emitter: -50 V
• Voltage, Collector To Emitter, Saturation: -0.3 V
• Voltage, Emitter To Base: -3 V
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5087LT1GOS; MMBT5087LT1GOS; MMBT5087LT1GOSTR

A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
L1
L
SOT−23 (TO−236)
MMBT5087LT1
CASE 318−08
ISSUE AN
q
0.25
c
7
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. 318−01 THRU −07 AND −09 OBSOLETE,
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
NEW STANDARD 318−08.
STYLE 6:
0.079
DIM
PIN 1. BASE
A1
H
2.0
L1
A
b
D
E
c
e
L
E
inches
mm
2. EMITTER
3. COLLECTOR
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.008
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX