MMBT2907AM3T5G ON Semiconductor, MMBT2907AM3T5G Datasheet - Page 4

• Manufacturer Part Number: MMBT2907AM3T5G
• Description: TRANS PNP GP 60V 600MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of MMBT2907AM3T5G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 265mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

300
200
100
7.0
5.0
3.0
70
50
30
20
10
-1.0
-0.8
-0.6
-0.4
-0.2
-5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
-0.005
-0.1
0
-7.0 -10
t
d
@ V
-0.01
I
C
= -1.0 mA
BE(off)
-0.2 -0.3
V
V
t
CE
CE
r
Figure 5. Turn−On Time
= 0 V
-20 -30
= -1.0 V
= -10 V
-0.02 -0.03 -0.05 -0.07 -0.1
I
C
, COLLECTOR CURRENT
-0.5 -0.7 -1.0
-50 -70 -100
-10 mA
Figure 4. Collector Saturation Region
V
I
T
C
CC
J
TYPICAL CHARACTERISTICS
/I
= 25°C
B
-200 -300 -500
-2.0 -3.0
2.0 V
= -30 V
= 10
Figure 3. DC Current Gain
-0.2 -0.3
I
http://onsemi.com
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
-5.0 -7.0
4
-0.5 -0.7 -1.0
500
300
200
100
7.0
5.0
70
50
30
20
10
-5.0
-10
-100 mA
-7.0 -10
T
J
= 125°C
-20
-2.0
t
25°C
f
I
Figure 6. Turn−Off Time
-30
t′
C
-20 -30
s
, COLLECTOR CURRENT (mA)
-3.0
= t
s
- 1/8 t
-50 -70 -100
- 55°C
-5.0 -7.0 -10
f
-50 -70 -100
-500 mA
V
I
I
T
C
B1
-200 -300
J
CC
/I
= 25°C
-20 -30
B
-200 -300 -500
= I
= -30 V
= 10
B2
-500
-50