NST856BF3T5G ON Semiconductor, NST856BF3T5G Datasheet - Page 3

• Manufacturer Part Number: NST856BF3T5G
• Description: TRANSISTOR GP PNP 65V SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NST856BF3T5G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 290mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0.0001
0
150°C
Figure 3. Base Emitter Saturation Voltage vs.
−55°C
I
25°C
C
/I
B
= 10
10 mA
Figure 5. Saturation Region
I
C
, COLLECTOR CURRENT (A)
I
0.0001
b
0.001
Collector Current
, BASE CURRENT (A)
30 mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50 mA
0
0.001
0.01
C
100 mA
ob
V
5
I
C
cb
Figure 7. Output Capacitance
=
, COLLECTOR BASE VOLTAGE (V)
http://onsemi.com
10
0.01
0.1
15
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.0001
10
9
8
7
6
5
4
3
20
0
150°C
−55°C
25°C
Figure 4. Base Emitter Turn−On Voltage vs.
V
CE
= 2.0 V
25
C
1.0
V
ib
eb
Figure 6. Input Capacitance
I
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
0.001
30
Collector Current
2.0
3.0
0.01
4.0
5.0
0.1