MMBT489LT1G ON Semiconductor, MMBT489LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT489LT1G
• Description: TRANS GP SS NPN GP 30V 1A SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT489LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 310mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300 at 50 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT489LT1GOS

1.0E-01
1.0E-02
1.0E-03
1.0E+00
500
400
800
700
600
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1E-05
0.001
0.001
+125°C
D = 0.01
+25°C
−55°C
0.05
0.02
r(t)
0.5
0.2
Figure 5. V
0.0001
Figure 3. h
0.01
0.01
0.1
BE(sat)
I
I
c
c
FE
(A)
(A)
0.001
versus I
versus I
0.1
0.1
I
c
/I
c
Figure 7. Normalized Thermal Response
b
V
c
= 10
CE
I
c
= 5 V
0.01
/I
b
http://onsemi.com
= 100
1
1
2
2
t, TIME (sec)
3
0.1
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.001
0.1
+125°C
−55°C
+25°C
SINGLE PULSE T
Figure 6. Safe Operating Area
1.0
Figure 4. V
0.01
1
amb
= 25°C
V
BE(on)
I
10
CE
c
(A)
(V)
versus I
0.1
10
100
V
c
CE
1 ms
= 5 V
100 ms
10 ms
dc
1 s
1
100
1000
2