PZT2222AT1G ON Semiconductor, PZT2222AT1G Datasheet - Page 15

• Manufacturer Part Number: PZT2222AT1G
• Description: TRANS SS SW NPN 600MA 40V SOT223
• Manufacturer: ON Semiconductor
• Type: Switchingr

Specifications of PZT2222AT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 1.5W
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V
• Current, Collector: 600 mA
• Current, Gain: 40
• Frequency: 300 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: PZT2222AT1GOS; PZT2222AT1GOS; PZT2222AT1GOSTR

Final Product/Process Change Notification #16266
MMBZ5229BLT1G
MMBZ5229BLT1H
MMBZ5230BLT1G
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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