NSS20201MR6T1G ON Semiconductor, NSS20201MR6T1G Datasheet - Page 2

• Manufacturer Part Number: NSS20201MR6T1G
• Description: TRANSISTOR NPN 2A 20V TSOP-6
• Manufacturer: ON Semiconductor

Specifications of NSS20201MR6T1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 5V
• Power - Max: 460mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSS20201MR6T1G; NSS20201MR6T1GOSTR

3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
Collector− Base Breakdown Voltage
(I
Emitter −Base Breakdown Voltage
(I
Collector Cutoff Current
(V
Collector−Emitter Cutoff Current
(V
Emitter Cutoff Current
(V
DC Current Gain (Note 3)
(I
(I
(I
Collector −Emitter Saturation Voltage (Note 3)
(I
(I
(I
Base −Emitter Saturation Voltage (Note 3)
(I
Base −Emitter Turn−on Voltage (Note 3)
(I
Cutoff Frequency
(I
Output Capacitance (f = 1.0 MHz)
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
= 0.1 mA, I
= 10 mA, I
= 0.1 mA, I
= 1.0 mA, V
= 0.5 A, V
= 1.0 A, V
= 1.0 A, I
= 0.5 A, I
= 0.1 A, I
= 1.0 A, I
= 1.0 A, V
= 100 mA, V
= 40 V, I
= 5.0 V)
= 20 V)
B
B
B
B
CE
CE
CE
B
E
E
C
= 100 mA)
= 50 mA)
= 10 mA)
= 0.1 A)
CE
= 0)
= 0)
CE
= 0)
= 0)
= 5.0 V)
= 5.0 V)
= 2.0 V)
= 5.0 V)
= 5.0 V, f = 100 MHz
Characteristic
(T
A
= 25°C unless otherwise noted)
NSS20201MR6T1G
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
BE(on)
h
CBO
EBO
CES
f
obo
FE
T
Min
300
300
200
200
5.0
20
40
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.150
0.100
0.025
Max
0.95
0.90
0.1
0.1
0.1
15
−
−
−
−
−
−
−
MHz
Unit
mA
mA
mA
pF
V
V
V
V
V
V