2N5195G ON Semiconductor, 2N5195G Datasheet

2N5195G

Manufacturer Part Number

2N5195G

Description

TRANS PNP PWR GP 4A 80V TO225AA

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.2N5194G.pdf (6 pages)

2.2N5195G.pdf (3 pages)

Specifications of 2N5195G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

1.4V @ 1A, 4A

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 1.5A, 2V

Power - Max

40W

Frequency - Transition

2MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

4 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

4 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

2 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

4 A

Current, Gain

Frequency

2 MHz

Package Type

TO-225AA

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

3.12 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Base

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

1.4 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N5195GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

2N5195G

Manufacturer:

Quantity:

10 000

Company:

H&T Electronics

Part Number:

2N5195G

Quantity:

2 000

Company:

H&T Electronics

Part Number:

2N5195G

Quantity:

2 500

Current page: 1 of 6
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Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

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2N5194, 2N5195

Silicon PNP Power

Transistors

circuits; excellent safe area limits. Complement to NPN 2N5191,

2N5192.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

October, 2006 − Rev. 12

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Junction

Temperature Range

Thermal Resistance,

Junction−to−Case

These devices are designed for use in power amplifier and switching

Pb−Free Packages are Available*

Characteristic

Rating

(Note 1)

Preferred Devices

= 25°C

Î Î Î

Symbol

, T

CEO

stg

Î Î Î

Î Î Î Î Î Î

2N5194

– 65 to + 150

Î Î Î Î

Max

3.12

320

5.0

4.0

1.0

2N5195

Î Î Î Î

Î Î

Î Î Î Î

Î Î

W/°C

°C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

2N5194

2N5194G

2N5195

2N5195G

Device

POWER TRANSISTORS

ORDERING INFORMATION

2N519x = Device Code

MARKING DIAGRAM

60 − 80 VOLTS

http://onsemi.com

PNP SILICON

4 AMPERE

(Pb−Free)

Package

TO−225

= Year

= Work Week

= Pb−Free Package

YWW

N519xG

x = 4 or 5

Publication Order Number:

CASE 77−09

TO−225AA

STYLE 1

500 Units / Bulk

Shipping

2N5194/D

Related parts for 2N5195G

2N5195G Summary of contents

Page 1

... Shipping Device Package 2N5194 TO−225 500 Units / Bulk 2N5194G TO−225 500 Units / Bulk (Pb−Free) 2N5195 TO−225 500 Units / Bulk 2N5195G TO−225 500 Units / Bulk (Pb−Free) Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N5194/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

100 25°C J 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2 25°C J 1.6 1.2 0 BE(sat) ...

Page 4

V CC TURN−ON PULSE V BE(off APPROX C << C − APPROX +9 APPROX ≤ 7 − < 500 ms ...

Page 5

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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