MJE18002G ON Semiconductor, MJE18002G Datasheet
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MJE18002G
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MJE18002G Summary of contents
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... MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h ♦ ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I C Collector Cutoff Current (V = Rated V CE Collector Cutoff Current (V = Rated V CE Collector Cutoff Current (V = 800 Emitter Cutoff Current (V = ...
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ELECTRICAL CHARACTERISTICS − continued (T Characteristic SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−On Time I = 0.4 Adc mAdc 0.2 Adc B2 Turn−Off Time V = 300 ...
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T = 125° 25° 0.01 0.10 1.00 0.01 0. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 25° 0.4 A ...
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TYPICAL SWITCHING CHARACTERISTICS 2500 B(off 300 V 2000 1500 1000 500 0 0.4 0.6 0.8 1.0 ...
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TYPICAL SWITCHING CHARACTERISTICS 180 160 140 120 100 T = 25° 125° FORCED ...
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dyn dyn 90 TIME Figure 18. Dynamic Saturation Voltage Measurements ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...