MJE243G ON Semiconductor, MJE243G Datasheet

MJE243G

Manufacturer Part Number

MJE243G

Description

TRANS PWR NPN 4A 100V TO225AA

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJE243G.pdf (6 pages)

2.MJE243G.pdf (3 pages)

Specifications of MJE243G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

600mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 200mA, 1V

Power - Max

1.5W

Frequency - Transition

40MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

7 V

Maximum Dc Collector Current

4 A

Power Dissipation

15 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

4 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

40 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

4 A

Current, Gain

Frequency

40 MHz

Package Type

TO-225

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

8.34 °C/W

Voltage, Breakdown, Collector To Emitter

100 V

Voltage, Collector To Base

100 V

Voltage, Collector To Emitter

100 V

Voltage, Collector To Emitter, Saturation

0.6 V

Voltage, Emitter To Base

7 V

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage

100V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

40MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MJE243GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE243G

Quantity:

1 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE243G

Manufacturer:

ON Semiconductor

Quantity:

450

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

MJE243G

Company:

H&T Electronics

Part Number:

MJE243G

Quantity:

52 000

Company:

H&T Electronics

Part Number:

MJE243G

Quantity:

15 000

Current page: 1 of 3
Download datasheet (69Kb)

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

low-current, high-speed switching applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb-Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance,

These devices are designed for low power audio amplifier and

High Collector-Emitter Sustaining Voltage -

High DC Current Gain @ I

Low Collector-Emitter Saturation Voltage -

High Current Gain Bandwidth Product -

Annular Construction for Low Leakages

Pb-Free Packages are Available*

Derate above 25_C

Junction-to-Ambient

Characteristic

CBO

CEO(sus)

CE(sat)

= 40 MHz (Min) @ I

Rating

= 40 - 200

= 40 - 120

= 100 nAdc (Max) @ Rated V

- Continuous

- Peak

= 0.3 Vdc (Max) @ I

= 100 Vdc (Min)

Preferred Device

= 25_C

= 200 mAdc

= 100 mAdc

Symbol

CEO

, T

= 500 mAdc

stg

–65 to +150

Value

8.34

83.4

Max

100

120

7.0

4.0

8.0

1.5

mW/_C

_C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

MJE243

MJE243G

MJE253

MJE253G

COMPLEMENTARY SILICON

Device

POWER TRANSISTORS

100 VOLTS, 15 WATTS

ORDERING INFORMATION

2 1

JE2x3 = Device Code

MARKING DIAGRAM

4.0 AMPERES

(Pb-Free)

= Year

= Work Week

= Pb-Free Package

Package

TO-225

x = 4 or 5

JE2x3G

YWW

CASE 77

STYLE 1

TO-225

500 Units/Box

Shipping

Related parts for MJE243G

MJE243G Summary of contents

Page 1

... Work Week JE2x3 = Device Code Pb-Free Package ORDERING INFORMATION Device Package Shipping MJE243 TO-225 500 Units/Box TO-225 500 Units/Box MJE243G (Pb-Free) MJE253 TO-225 500 Units/Box TO-225 500 Units/Box MJE253G (Pb-Free) Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage ( mAdc Collector Cutoff Current (V = 100 Vdc 100 Vdc 125_C) CE ...

Page 3

MJE243 - NPN 0.25 (0.010 0.25 (0.010 MJE253 - PNP PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE ...

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