MJE802G ON Semiconductor, MJE802G Datasheet - Page 2
![TRANS DARL NPN 4A 80V TO225AA](/photos/5/66/56603/488-to-225aa_sml.jpg)
MJE802G
Manufacturer Part Number
MJE802G
Description
TRANS DARL NPN 4A 80V TO225AA
Manufacturer
ON Semiconductor
Type
Power, Switchr
Specifications of MJE802G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
4A
Dc Current Gain
100@4A@3V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-225
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
4 A
Maximum Collector Cut-off Current
100 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Current, Gain
100
Current, Input
0.1 A
Current, Output
4 A
Power Dissipation
40 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
80 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
MJE802GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE802G
Manufacturer:
ON Semiconductor
Quantity:
1 876
Company:
Part Number:
MJE802G
Manufacturer:
ON Semiconductor
Quantity:
15 200
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 1)
Collector−Emitter Saturation Voltage (Note 1)
Base−Emitter On Voltage (Note 1)
Small−Signal Current Gain
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
CE
CE
BE
= 50 mAdc, I
= 1.5 Adc, V
= 2.0 Adc, V
= 4.0 Adc, V
= 1.5 Adc, I
= 2.0 Adc, I
= 4.0 Adc, I
= 1.5 Adc, V
= 2.0 Adc, V
= 4.0 Adc, V
= 1.5 Adc, V
(V
(V
= 5.0 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
CB
CB
= Rated BV
= Rated BV
B
B
B
CE
CE
CE
CE
CE
CE
CE
B
B
B
= 30 mAdc)
= 40 mAdc)
= 40 mAdc)
C
= 0)
= 0)
= 0)
= 0)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc, f = 1.0 MHz)
CEO
CEO
, I
, I
E
E
Characteristic
= 0)
= 0, T
50
40
30
20
10
0
25
(T
C
= 100_C)
C
= 25_C unless otherwise noted)
MJE702, MJE703, MJE802, MJE803
MJE702, MJE703, MJE802, MJE803
MJE700, MJE702, MJE800, MJE802
MJE700, MJE702, MJE800, MJE802
MJE700, MJE702, MJE800, MJE802
50
TO-126
Figure 1. Power Derating
T
http://onsemi.com
C
, CASE TEMPERATURE (°C)
TO-220AB
75
MJE700, MJE800
MJE700, MJE800
MJE703, MJE803
MJE703, MJE803
MJE703, MJE803
2
All devices
All devices
All devices
100
125
V
Symbol
V
V
(BR)CEO
I
I
I
CE(sat)
BE(on)
h
CEO
CBO
EBO
h
FE
fe
150
Min
750
750
100
1.0
60
80
−
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
500
2.0
2.5
2.8
3.0
2.5
2.5
3.0
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
−
−