MJD45H11G ON Semiconductor, MJD45H11G Datasheet - Page 2

TRANS POWER PNP 8A 80V DPAK

MJD45H11G

Manufacturer Part Number
MJD45H11G
Description
TRANS POWER PNP 8A 80V DPAK
Manufacturer
ON Semiconductor
Type
Powerr
Datasheets

Specifications of MJD45H11G

Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
90MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
60
Power Dissipation
1.75W
Frequency (max)
90MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
8 A
Maximum Dc Collector Current
8 A
Maximum Operating Frequency
90 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 2 A at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
8 A
Current, Gain
40
Frequency
90 MHz
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
6.25 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD45H11G
MJD45H11GOS

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ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Collector Capacitance
Gain Bandwidth Product
Delay and Rise Times
Storage Time
Fall Time
(I
(V
(V
(I
(I
(V
(V
(V
(I
(I
(I
(I
C
C
C
C
C
C
C
CE
EB
CE
CE
CB
= 30 mA, I
= 8 Adc, I
= 8 Adc, I
= 0.5 Adc, V
= 5 Adc, I
= 5 Adc, I
= 5 Adc, I
= Rated V
= 5 Vdc)
= 1 Vdc, I
= 1 Vdc, I
= 10 Vdc, f
B
B
B1
B1
B1
B
= 0.4 Adc)
= 0.8 Adc)
C
C
= 0)
CEO
CE
= 0.5 Adc)
= I
= I
test
= 2 Adc)
= 4 Adc)
B2
B2
= 10 Vdc, f = 20 MHz)
, V
= 1 MHz)
= 0.5 Adc)
= 0.5 Adc
BE
= 0)
Characteristic
(T
C
= 25_C unless otherwise noted)
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MJD44H11
MJD45H11
MJD44H11
MJD45H11
MJD44H11
MJD45H11
MJD44H11
MJD45H11
MJD44H11
MJD45H11
V
Symbol
V
V
CEO(sus)
t
I
CE(sat)
BE(sat)
I
d
h
C
CES
EBO
f
t
t
FE
+ t
T
cb
s
f
r
Min
80
60
40
Typ
130
300
135
500
500
140
100
45
85
90
Max
1.0
1.0
1.5
1
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
pF
ns
ns
ns

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