BUV26G ON Semiconductor, BUV26G Datasheet
BUV26G
Manufacturer Part Number
BUV26G
Description
TRANS NPN 90V 20A BIPLAR TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.BUV26G.pdf
(3 pages)
Specifications of BUV26G
Transistor Type
NPN
Current - Collector (ic) (max)
20A
Voltage - Collector Emitter Breakdown (max)
90V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1.2A, 12A
Power - Max
85W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
BUV26
Switchmode Series NPN
Silicon Power Transistor
Features
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current
Base Current − Continuous
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Junction
Thermal Resistance,
Designed for high−speed applications.
Switchmode Power Supplies
High Frequency Converters
Relay Drivers
Driver
Pb−Free Package is Available*
Temperature Range
Junction−to−Case
Characteristic
Rating
− Peak (pw 10 ms)
(T
J
= 25°C unless otherwise noted)
C
C
= 25°C
= 60°C
V
Symbol
Symbol
T
CEO(sus)
V
V
R
J
I
I
P
P
, T
CBO
EBO
CM
I
BM
I
qJC
C
B
D
D
stg
− 65 to +150
Value
Max
1.76
180
7.0
4.0
6.0
90
20
30
85
65
1
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Apk
Adc
Adc
°C
W
W
1
BUV26G
BUV26
2
3
Device
POWER TRANSISTORS
90 VOLTS, 85 WATTS
ORDERING INFORMATION
BUV26 = Device Code
A
Y
WW
G
http://onsemi.com
NPN SILICON
12 AMPERES
CASE 221A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
Package
TO−220
STYLE 1
TO−220
TO−220
Publication Order Number:
50 Units/Rail
50 Units/Rail
MARKING
DIAGRAM
Shipping
BUV26G
AYWW
BUV26/D
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BUV26G Summary of contents
Page 1
... NPN SILICON POWER TRANSISTORS 90 VOLTS, 85 WATTS MARKING DIAGRAM TO−220 BUV26G CASE 221A AYWW STYLE BUV26 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BUV26 TO−220 50 Units/Rail TO−220 50 Units/Rail BUV26G (Pb−Free) Publication Order Number: BUV26/D ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 200 mA mH Collector Cutoff Current at Reverse Bias (V = 180 −1 125° ...
Page 3
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...