MJD50G ON Semiconductor, MJD50G Datasheet - Page 4

• Manufacturer Part Number: MJD50G
• Description: TRANS POWER NPN 1A 400V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD50G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 1A
• Current - Collector Cutoff (max): 200µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 300mA, 10V
• Power - Max: 1.56W
• Frequency - Transition: 10MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD50G; MJD50GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MJD47G
MJD47T4G
MJD50G
MJD50T4G
0.05
0.02
0.01
0.5
0.2
0.1
1
0.02
0.05
I
Device
C
, COLLECTOR CURRENT (AMPS)
Figure 7. Turn−On Time
0.1
t
t
r
d
0.2
0.5
T
V
I
C
J
CC
/I
= 25°C
B
= 200 V
= 5
1
http://onsemi.com
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
369C
369C
369C
369C
4
0.05
0.5
0.2
0.1
5
2
1
0.02
0.05
I
C
Figure 8. Turn-Off Time
, COLLECTOR CURRENT (AMPS)
0.1
0.2
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
t
t
s
f
0.5
†
T
V
I
C
J
CC
/I
= 25°C
B
1
= 200 V
= 5
2