MJF3055G ON Semiconductor, MJF3055G Datasheet

MJF3055G

Manufacturer Part Number

MJF3055G

Description

TRANS PWR NPN 10A 60V TO220FP

Manufacturer

ON Semiconductor

Datasheet

1.MJF3055G.pdf (5 pages)

Specifications of MJF3055G

Transistor Type

NPN

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

90V

Vce Saturation (max) @ Ib, Ic

2.5V @ 3.3A, 10A

Current - Collector Cutoff (max)

1µA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 4A, 4V

Power - Max

Frequency - Transition

2MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

90 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

10 A

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

10 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

2 MHz

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJF3055GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJF3055G

Manufacturer:

AVAGO

Quantity:

4 162

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Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î

MJF3055 (NPN),

MJF2955 (PNP)

Complementary

Silicon Power Transistors

applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

2. Measurement made with thermocouple contacting the bottom insulated

3. Proper strike and creepage distance must be provided.

*For additional information on our Pb−Free strategy and soldering details,

July, 2008 − Rev. 7

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Emitter Breakdown Voltage

Base−Emitter Voltage

Collector Current − Continuous

Base Current − Continuous

RMS Isolation Voltage (Note 3)

Total Power Dissipation @ T

Operating and Storage Temperature Range

Thermal Resistance, Junction−to−Case (Note 2)

Thermal Resistance, Junction−to−Ambient

Lead Temperature for Soldering Purposes

Specifically designed for general purpose amplifier and switching

Isolated Overmold Package (1500 Volts RMS Min)

Electrically Similar to the Popular MJE3055T and MJE2955T

Collector−Emitter Sustaining Voltage − V

10 Amperes Rated Collector Current

No Isolating Washers Required

Reduced System Cost

UL Recognized, File #E69369, to 3500 V

Epoxy Meets UL 94 V−0 at 0.125 in

ESD Ratings: Machine Model, C; u400 V

Pb−Free Packages are Available*

surface (in a location beneath the die), the devices mounted on a heatsink with

thermal grease and a mounting torque of ≥ 6 in. lbs.

(t = 0.3 sec, R.H. ≤ 30%, T

Per Figure 5

Derate above 25_C

Characteristic

Human Body Model, 3B; u8000 V

Rating

= 25_C

= 25_C (Note 2)

= 25_C)

Î Î Î Î

CEO(sus)

RMS

Symbol

CEO(sus)

EBO

ISOL

, T

CES

qJC

qJA

Isolation

stg

90 Volts

Î Î Î

Value

–55 to

0.016

4500

+150

0.25

Max

62.5

260

5.0

6.0

2.0

4.0

Î Î Î

W/_C

_C/W

Unit

Vdc

Adc

RMS

MJF2955

MJF2955G

MJF3055

MJF3055G

Device

COMPLEMENTARY SILICON

POWER TRANSISTORS

90 VOLTS, 30 WATTS

Fxx55 = Specific Device Code

ORDERING INFORMATION

MARKING DIAGRAM

TO−220 FULLPACK

http://onsemi.com

TO−220 FULLPACK

10 AMPERES

TO−220 FULLPACK

= Pb−Free Package

= Assembly Location

= Year

= Work Week

xx= 29 or 30

(Pb−Free)

Package

Fxx55G

TO−220 FULLPACK

AYWW

Publication Order Number:

CASE 221D

STYLE 2

50 Units/Rail

Shipping

MJF3055/D

Related parts for MJF3055G

MJF3055G Summary of contents

Page 1

... T 260 _C L Î Î Î Î Î Î Î Î Î Î Device MJF2955 MJF2955G MJF3055 MJF3055G 1 http://onsemi.com POWER TRANSISTORS 10 AMPERES 90 VOLTS, 30 WATTS TO−220 FULLPACK CASE 221D STYLE MARKING DIAGRAM Fxx55G ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 150° CURRENT LIMIT SECONDARY BREAKDOWN LIMIT 0.5 THERMAL LIMIT @ T = 25°C C (SINGLE PULSE) 0.3 0 COLLECTOR-EMITTER VOLTAGE ...

Page 4

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not . recommend exceeding 10 in lbs of mounting torque under any mounting conditions ...

Page 5

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3 ...

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