MJF18008G ON Semiconductor, MJF18008G Datasheet - Page 5

• Manufacturer Part Number: MJF18008G
• Description: TRANS PWR NPN 8A 450V TO220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJF18008G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 900mA, 4.5V
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 45W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJF18008GOS

of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
0.01
100
There are two limitations on the power handling ability
160
150
140
130
120
100
0.1
1,0
0,8
0,6
0,4
0,2
0,0
110
10
90
80
70
60
1
10
20
3
DC (MJE18008)
DC (MJF18008)
Figure 15. Forward Bias Safe Operating Area
4
Figure 17. Forward Bias Power Derating
40
V
CE
5
T
T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Inductive Fall Time
J
J
5 ms
= 25°C
= 125°C
6
T
60
C
THERMAL DERATING
, CASE TEMPERATURE (°C)
7
I
C
1 ms
h
= 4.5 A
FE
, FORCED GAIN
8
80
GUARANTEED SAFE OPERATING AREA INFORMATION
100
9
100
TYPICAL SWITCHING CHARACTERISTICS
10
I
C
SECOND BREAKDOWN
= 2 A
EXTENDED
11
120
SOA
DERATING
10 ms
12
(I
B2
I
V
V
L
B(off)
C
CC
Z
13
140
= 200 mH
C
= 300 V
= I
= 15 V
http://onsemi.com
1 ms
= I
− V
C
C
14
/2 for all switching)
/2
CE
1000
160
15
5
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on T
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. T
from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
400
350
300
250
200
150
100
50
9
8
7
6
5
4
3
2
1
0
3
0
C
4
Figure 16. Reverse Bias Switching Safe
= 25°C; T
Figure 14. Inductive Crossover Time
V
200
I
5
CE
C
T
T
= 4.5 A
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
J
= 25°C
= 125°C
6
V
J(pk)
BE(off)
7
400
Operating Area
h
FE
, FORCED GAIN
is variable depending on power
8
= 0 V
I
C
9
= 2 A
600
J(pk)
10
-1, 5 V
11
may be calculated
C
800
> 25°C. Second
12
I
V
V
L
B(off)
C
CC
Z
T
I
L
C
= 200 mH
= 300 V
C
C
/I
= 15 V
13
B
= 500 mH
= I
≤ 125°C
- 5 V
≥ 4
C
1000
/2
14
15