BUV22G ON Semiconductor, BUV22G Datasheet - Page 3

• Manufacturer Part Number: BUV22G
• Description: TRANS NPN 250V 40A BIPO TO-3
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUV22G

• Transistor Type: NPN
• Current - Collector (ic) (max): 40A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 2.5A, 20A
• Current - Collector Cutoff (max): 3mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 10A, 4V
• Power - Max: 250W
• Frequency - Transition: 8MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.1
40
10
1
2.0
1.6
1.2
0.8
0.4
3.0
2.0
1.0
0.4
0.3
0.2
1
0
4
Figure 2. Active Region Safe Operating Area
Figure 5. Resistive Switching Performance
V
CE
8
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. “On” Voltages
I
I
C
C
10
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
1
12
I
C
/I
B
= 8
16
100
10
V
V
BE
CE
250
20
t
t
t
on
F
S
http://onsemi.com
BUV22
24
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
the power that can handled to values less than the limitations
imposed by second breakdown.
50
45
40
35
30
25
20
15
10
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
At high case temperatures, thermal limitations will reduce
5
0
0.1
R
C
Figure 6. Switching Times Test Circuit
− R
B
I
B1
: Non inductive resistances
Figure 4. DC Current Gain
I
I
C
B2
, COLLECTOR CURRENT (A)
1
R
B
R
C
V
CC
10
C
= 25_C; T
10
I
V
V
C
R
R
I
CC
/I
CE
B1
4
C
B
B
mF
= 5 V
= 100 V
= 5 W
= 2.7 W
= I
= 8
B2
C
J(pk)
− V
100
CE
is