BC214L Fairchild Semiconductor, BC214L Datasheet

TRANSISTOR PNP 30V 500MA TO-92

BC214L

Manufacturer Part Number
BC214L
Description
TRANSISTOR PNP 30V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BC214L

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
140 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

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©2003 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
• Sourced from process 68.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
V
Small Signal Characteristics
f
NF
h
C
C
CBO
EBO
T
switches requiring collector currents to 300mA.
FE
fe
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
OB
Symbol
, T
Symbol
(sat)
(sat)
(on)
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Output Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
Operating and Storage Junction Temperature Range
Parameter
T
a
=25°C unless otherwise noted
Parameter
T
a
=25°C unless otherwise noted
- Continuous
BC214L
I
I
I
V
V
V
V
V
I
I
I
V
V
f = 100MHz
V
R
I
f = 1KHz
V
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CB
G
= -2mA, I
= -10µA, I
= -10mA, I
= -10µA, I
= -100mA, I
= -100mA, I
= -2mA, V
= 2kΩ, f = 15.7KHz
= -4V, I
= -30V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, f = 1MHz
Test Condition
B
C
C
C
C
C
C
C
E
C
CE
B
E
= 0
= 0
= -10µA
= -2mA
= -100mA
= -2mA
= -10mA
= -200µA
B
B
= 0
= 0
= -0.5mA
= 0
= -5V
= -5mA
= -5mA
1. Emitter 2. Collector 3. Base
1
- 55 ~ 150
Value
-500
-5.0
-30
-45
Min.
-5.0
100
140
120
-0.6
200
140
-30
-45
TO-92
-0.25
-0.72
Max.
400
-0.6
-1.1
-15
2.0
-15
10
Rev. A, October 2003
Units
mA
°C
V
V
V
Units
MHz
nA
nA
dB
pF
V
V
V
V
V
V

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BC214L Summary of contents

Page 1

... T NF Noise Figure h Small Signal Current Gain fe C Output Capacitance OB * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Fairchild Semiconductor Corporation BC214L T =25°C unless otherwise noted a Parameter - Continuous T =25°C unless otherwise noted a Test Condition I = -2mA, I ...

Page 2

... Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2003 Fairchild Semiconductor Corporation T =25°C unless otherwise noted A Parameter Max. Units 625 mW 5.0 mW/°C °C/W 83.3 °C/W 200 Rev. A, October 2003 ...

Page 3

... Package Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 ] ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 [1.27 ] ±0.20 3.60 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2003 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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