BC857B STMicroelectronics, BC857B Datasheet - Page 2

• Manufacturer Part Number: BC857B
• Description: TRANSISTOR PNP -45V -100MA SOT23
• Manufacturer: STMicroelectronics

Specifications of BC857B

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 497-2526-2

BC857B
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
R
V
Device mounted on a PCB area of 1 cm
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symbol
V
V
(BR)CEO
thj-amb
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
BE(on)
I
I
h
CBO
NF
EBO
CBO
f
FE
T
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
Collector-Base
Capacitance
Noise Figure
C
E
B
C
= 0)
= 0)
= 0)
= 0)
Parameter
E
= 0)
2
.
2 %
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
C
C
E
C
C
C
C
C
C
C
C
E
f = 200 Hz R
CB
CB
EB
CE
= -10 A
= -2 mA
= -10 A
= -10 mA
= -100 mA
= -10 mA
= -100 mA
= -2 mA
= -10 mA
= -2 mA
= -10 mA V
= 0
= -5 V
= -30 V
= -30 V
= -5 V I
case
= 25
Test Conditions
V
CB
C
o
V
CE
= -10 V
= -0.2 mA f = 1KHz
C unless otherwise specified)
G
CE
= 2 K
= -5 V f = 100MHz
T
= -5 V
I
I
I
I
V
V
B
B
C
B
B
CE
CE
= -5 mA
= -5 mA
= -0.5 mA
= -0.5 mA
= 150
= -5 V
= -5 V
f = 1 MHz
o
C
Max
Min.
-0.6
220
100
-50
-45
-5
-0.07
-0.25
-0.85
-0.65
Typ.
-0.7
500
4.5
-1
2
-0.65
-0.75
-0.82
Max.
-100
-0.3
475
-15
10
-5
o
Unit
MHz
C/W
nA
nA
pF
dB
V
V
V
V
V
V
V
V
V
A