MPSA20 ON Semiconductor, MPSA20 Datasheet - Page 6
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MPSA20
Manufacturer Part Number
MPSA20
Description
TRANS NPN SS GP 40V TO92
Manufacturer
ON Semiconductor
Datasheet
1.MPSA20.pdf
(7 pages)
Specifications of MPSA20
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 5mA, 10V
Power - Max
625mW
Frequency - Transition
125MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MPSA20OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
10
10
400
10
10
10
200
100
10
10
4.0
6.0
0.07
0.05
0.03
0.02
0.01
60
20
10
40
−1
−2
1.0
0.7
0.5
0.3
0.2
0.1
4
1
0
3
2
2.0
− 4
0
0.01
V
CC
− 2
0.02
0
= 30 Vdc
V
D = 0.5
0.01
CE
0.05
0.02
0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
0.1
4.0
0.05
T
T
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
J
J
, JUNCTION TEMPERATURE (°C)
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
= 150°C
0.1
6.0
T
A
Figure 22.
Figure 21.
0.2
= 25°C
8.0 10
SINGLE PULSE
T
C
I
= 25°C
CEO
0.5
I
dc
CEX
1.0 ms
1.0
@ V
dc
100 ms
2.0
BE(off)
10 ms
AND
I
CBO
20
1.0 s
Figure 19. Thermal Response
= 3.0 Vdc
5.0
http://onsemi.com
10
MPSA20
40
t, TIME (ms)
6
20
the model as shown in Figure 20. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
duty cycles.
19 by the steady state value R
Dissipating 2.0 watts peak under the following conditions:
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
Application Note AN569/D, available on our website at
www.onsemi.com.
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
limits of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
or T
are valid for duty cycles to 10% provided T
T
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
A train of periodical power pulses can be represented by
Example:
The peak rise in junction temperature is therefore
For more information, see ON Semiconductor
To find Z
J(pk)
The data of Figure 22 is based upon T
50
A
t
DT = r(t) x P
1
The safe operating area curves indicate I
is variable depending upon conditions. Pulse curves
= 1.0 ms, t
may be calculated from the data in Figure 19. At
100 200
P
(pk)
qJA(t)
, multiply the value obtained from Figure
t
2
(pk)
FIGURE 20
1
= 5.0 ms. (D = 0.2)
500 1.0 k 2.0 k
t
2
x R
qJA
= 0.22 x 2.0 x 200 = 88°C.
qJA
DUTY CYCLE, D = t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
Z
T
qJA(t)
J(pk)
.
− T
= r(t) • R
5.0 k 10 k 20 k 50 k 100 k
A
= P
J(pk)
(pk)
qJA
1
J(pk)
Z
(SEE AN−569)
= 150°C; T
qJA(t)
1
/t
2
≤ 150°C.
C
−V
CE
C