P2N2222A ON Semiconductor, P2N2222A Datasheet - Page 3

• Manufacturer Part Number: P2N2222A
• Description: TRANS SS GP NPN LP 40V TO92
• Manufacturer: ON Semiconductor

Specifications of P2N2222A

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: P2N2222AOS

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1000
700
500
300
200
100
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
−2 V
0.005
+16 V
0
0
0.1
0.01
0.2
I
C
< 2 ns
= 1.0 mA
Figure 1. Turn−On Time
0.3
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
(V
I
(V
I
C
B1
0.02 0.03
CC
CC
= 150 mAdc, I
= I
0.5 0.7
= 30 Vdc, V
= 30 Vdc, I
B2
= 15 mAdc) (Figure 2)
1 kW
Characteristic
0.05
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0
C
B1
BE(off)
= 150 mAdc,
(T
= 15 mAdc) (Figure 1)
10 mA
A
= 25°C unless otherwise noted) (Continued)
= −2.0 Vdc,
2.0
0.1
Figure 3. Collector Saturation Region
+30 V
200
3.0
Figure 4. DC Current Gain
T
J
C
= 125°C
I
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
25°C
−55°C
0.2
S
C
http://onsemi.com
* < 10 pF
, COLLECTOR CURRENT (mA)
5.0 7.0
I
B
, BASE CURRENT (mA)
0.3
V
V
3
CE
CE
10
0.5
= 1.0 V
= 10 V
+16 V
0
−14 V
1.0
20
30
150 mA
Figure 2. Turn−Off Time
2.0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
Symbol
< 20 ns
50 70 100
3.0
t
t
t
t
d
s
r
f
5.0
1 k
1N914
Min
−
−
−
−
200
−4 V
10
500 mA
300
Max
225
10
25
60
+30 V
200
20
500 700
T
J
C
= 25°C
30
S
* < 10 pF
Unit
ns
ns
ns
ns
1.0 k
50