MPSA28 ON Semiconductor, MPSA28 Datasheet - Page 3

• Manufacturer Part Number: MPSA28
• Description: TRANS NPN DARL SS 80V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSA28

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MPSA28OS

−1.0
−2.0
−3.0
−4.0
−5.0
200
100
500
200
100
5.0
2.0
1.0
1 k
50
20
10
50
20
10
0
1.0
1.0
1.0
Figure 5. Active Region − Safe Operating Area
qVB for V
qVC for V
VALID FOR DUTY CYCLE v 10%
2.0
2.0
T
2.0
T
T
A
T
Figure 3. Temperature Coefficients
V
BE
A
A
A
CE
= 25°C
= 125°C
= −55°C
= 25°C
CE(S)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0
5.0
Figure 1. DC Current Gain
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
10
10
5.0
20
20
V
CE
25°C to 125°C
10
25°C to 125°C
= 5.0 V
T
50
50
C
1.0 s
= 25°C
MPSA28
1.0 ms
20
100
100
MPSA29
−55°C to 25°C
200
200
−55°C to 25°C
100 ms
MPSA28, MPSA29
50
http://onsemi.com
500
500
100
1 k
3
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.4
2.0
1.6
1.2
0.8
0.4
5.0
2.0
1.0
0.5
0.2
0.1
10
1.0
0.3
0.2
T
I
0.5
C
A
2.0
= 10 mA
= 25°C
Figure 6. High Frequency Current Gain
T
Figure 4. Collector Saturation Region
V
T
f = 100 MHz
A
A
CE
= 25°C
= 25°C
1.0
= 5.0 V
1.0
5.0
Figure 2. “ON” Voltages
I
I
2.0
2.0
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
V
CE(S)
I
10
B
, BASE CURRENT (mA)
I
C
@ I
5.0
= 100 mA
20
10 20
C
/I
B
V
10
= 1.0 k
BE(S)
50
I
@ I
C
20
= 250 mA
V
C
100
BE(ON)
/I
B
100 200
= 1.0 k
50
200
@ V
I
C
CE
100
= 500 mA
= 5.0 V
500
200 300
1 k 1.5 k
1 k