MPS6601 ON Semiconductor, MPS6601 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
MPS6601
Manufacturer Part Number
MPS6601
Description
TRANS NPN SS GP 25V TO92
Manufacturer
ON Semiconductor
Datasheet
1.MPS6601.pdf
(8 pages)
Specifications of MPS6601
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MPS6601OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
10 k
500
200
100
8.0
6.0
4.0
2.0
5 k
3 k
1 k
80
60
40
20
10
50
20
10
0
0
C
C
10
10
ob
ib
Figure 13. MPS6601/6602 Switching Times
Figure 11. MPS6601/6602 Noise Figure
20
5.0
1.0
R
V
s
I
C
R
, SOURCE RESISTANCE (OHMS)
Figure 9. Capacitance
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
100
MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
50
2.0
10
NPN
I
100
C
= 100 mA
3.0
15
200
t
V
I
I
T
1 k
d
C
B1
CC
J
/I
@ V
= 25°C
B
= I
= 40 V
= 10
B2
BE(off)
V
f = 1.0 kHz
T
A
CE
t
4.0
t
20
= 25°C
t
r
s
f
T
= 5.0 V
J
C
C
500
= 0.5 V
= 25°C
http://onsemi.com
ib
ob
t
d
10 k
1000
5.0
25
5
10 k
160
120
500
200
100
8.0
6.0
4.0
2.0
5 k
3 k
1 k
80
40
10
50
20
10
0
0
−10
10
C
C
ob
ib
Figure 14. MPS6651/6652 Switching Times
Figure 12. MPS6651/6652 Noise Figure
−20
−5.0
−1.0
100
R
V
s
I
Figure 10. Capacitance
C
R
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
−50
I
−2.0
−10
C
= 100 mA
PNP
−100
1 k
−3.0
−15
−200
t
V
I
I
T
d
C
B1
CC
J
/I
@ V
= 25°C
B
= I
= −40 V
= 10
10 k
B2
BE(off)
t
t
V
f = 1.0 kHz
T
s
f
A
CE
−4.0
−20
= 25°C
T
= −5.0 V
J
−500
= −0.5 V
C
C
= 25°C
ib
ob
t
t
d
r
−1000
−5.0
−25