MMBT2907ALT1 ON Semiconductor, MMBT2907ALT1 Datasheet - Page 3

• Manufacturer Part Number: MMBT2907ALT1
• Description: TRANS SS GP PNP 60V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2907ALT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• No. Of Pins: 3
• C-e Breakdown Voltage: -60V
• Power (ptot): 300mW
• Peak Reflow Compatible (260 C): No
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2907ALT1OSCT

300
200
100
7.0
5.0
3.0
1000
70
50
30
20
10
-1.0
-0.8
-0.6
-0.4
-0.2
100
-5.0
10
-0.005
0
1.0
-7.0 -10
t
d
T
- 55°C
25°C
@ V
J
-0.01
= 150°C
I
C
= -1.0 mA
BE(off)
t
r
Figure 5. Turn−On Time
= 0 V
-20 -30
-0.02 -0.03 -0.05 -0.07 -0.1
I
C
, COLLECTOR CURRENT
-50 -70 -100
-10 mA
Figure 4. Collector Saturation Region
V
I
T
C
J
CC
TYPICAL CHARACTERISTICS
/I
10
= 25°C
B
-200 -300 -500
2.0 V
= -30 V
= 10
Figure 3. DC Current Gain
-0.2 -0.3
I
http://onsemi.com
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
3
-0.5 -0.7 -1.0
500
300
200
100
7.0
5.0
70
50
30
20
10
-5.0
-100 mA
-7.0 -10
-2.0
t
f
100
Figure 6. Turn−Off Time
I
t′
C
-20 -30
s
, COLLECTOR CURRENT (mA)
-3.0
= t
s
- 1/8 t
-5.0 -7.0 -10
f
-50 -70 -100
-500 mA
V
I
I
T
C
B1
J
CC
/I
= 25°C
-20 -30
B
-200 -300 -500
= I
= -30 V
= 10
B2
V
CE
= 10 V
1000
-50