MMBT8099LT1 ON Semiconductor, MMBT8099LT1 Datasheet
MMBT8099LT1
Manufacturer Part Number
MMBT8099LT1
Description
TRANS SS GP NPN 80V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT8099LT1G.pdf
(5 pages)
Specifications of MMBT8099LT1
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
225mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBT8099LT1OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT8099LT1G
Manufacturer:
ON
Quantity:
30 000
MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation Alumina
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
1.8
2.4
6.0
80
80
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT8099LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
KB
M
G
ORDERING INFORMATION
BASE
MARKING DIAGRAM
1
http://onsemi.com
SOT−23 (TO−236)
1
= Specific Device Code
= Date Code*
= Pb−Free Package
1
COLLECTOR
(Pb−Free)
CASE 318
Package
STYLE 6
SOT−23
KB M G
EMITTER
2
G
Publication Order Number:
3
2
3
3000/Tape & Reel
MMBT8099LT1/D
Shipping
†
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MMBT8099LT1 Summary of contents
Page 1
... MARKING DIAGRAM Specific Device Code M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000/Tape & Reel (Pb−Free) Publication Order Number: MMBT8099LT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note mAdc Collector −Base Breakdown Voltage (I = 100 mAdc Emitter −Base Breakdown Voltage ( ...
Page 3
TURN-ON TIME -1.0 V 5.0 ms 100 + 3 100 *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 300 T ...
Page 4
T = 125°C J 25°C 200 -55°C 100 0.2 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) C Figure 6. DC Current Gain 2 ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT8099LT1/D ...