PZT751T1 ON Semiconductor, PZT751T1 Datasheet - Page 3

• Manufacturer Part Number: PZT751T1
• Description: TRANS SS HC PNP 2A 60V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT751T1

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 800mW
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: PZT751T1OSCT

300
270
240
210
180
150
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
90
60
30
0
0
0
0.05
10
50
T
J
-- 55C
0.1 0.2
I
20
= 125C
C
25C
Figure 5. Collector Saturation Region
= 10 mA I
Figure 1. Typical DC Current Gain
100
50
0.5 1.0 2.0
I
I
C
C
Figure 3. On Voltages
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
C
100
= 100 mA
I
B
200
, BASE CURRENT (mA)
V
200
BE(on)
V
NPN
NPN
NPN
BE(sat)
I
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
500 1.0 A 2.0 A 4.0 A
@ I
CE
C
/I
= 2.0 V
@ I
B
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
V
= 25C
CE
= 2.0 A
2.0 A
= 2.0 V
http://onsemi.com
4.0 A
3
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
250
225
200
175
150
125
100
75
50
25
0
0
--0.05
0
--10 -- 20
--50
T
--0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20
J
I
= 125C
C
-- 55C
25C
Figure 6. Collector Saturation Region
= --10 mA
Figure 2. Typical DC Current Gain
--100
-- 50 --100 -- 200
I
C
I
Figure 4. On Voltages
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
I
B
--200
, BASE CURRENT (mA)
I
C
= --100 mA
V
CE(sat)
PNP
PNP
PNP
V
BE(sat)
--500
-- 500
I
V
C
@ I
BE(on)
= --500 mA
@ I
C
/I
--1.0 A --2.0 A --4.0 A
B
C
@ V
--1.0 A
= 10
/I
B
= 10
CE
--50 --100 --200 --500
= 2.0 V
V
CE
--2.0 A
T
J
I
= --2.0 V
C
= 25C
= --2.0 A
--4.0 A