2N5089 ON Semiconductor, 2N5089 Datasheet - Page 3

• Manufacturer Part Number: 2N5089
• Description: TRANS NPN SS GP 50MA 25V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5089

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 100µA, 5V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N5089OS

300
200
100
7.0
5.0
3.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
5.0
3.0
30
20
10
10
70
50
30
20
10
10
10 20
10 20
R
1.0 mA
BANDWIDTH = 1.0 Hz
S
20
≈ 0
3.0 mA
50 100 200
50 100 200
50 100 200
I
Figure 2. Effects of Frequency
C
Figure 6. Total Noise Voltage
= 10 mA
R
Figure 4. Noise Current
S
300 mA
, SOURCE RESISTANCE (OHMS)
10 mA
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
300 mA
BANDWIDTH = 1.0 Hz
500 1 k 2 k
500 1 k 2 k
500 1 k 2 k
1.0 mA
3.0 mA
100 mA
R
S
≈ 0
I
C
BANDWIDTH = 1.0 Hz
30 mA
100 mA
= 10 mA
5 k 10 k 20 k 50 k 100 k
300 mA
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
1.0 mA
I
3.0 mA
C
= 10 mA
10 mA
NOISE CHARACTERISTICS
(V
2N5088, 2N5089
CE
http://onsemi.com
100 Hz NOISE DATA
30 mA
NOISE VOLTAGE
= 5.0 Vdc, T
3
8.0
4.0
8.0
4.0
7.0
5.0
3.0
16
12
20
12
30
20
10
20
16
0
0
A
0.01 0.02
10
10 20
= 25°C)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
Figure 3. Effects of Collector Current
50 100 200
R
Figure 5. Wideband Noise Figure
50 100 200
S
≈ 0
0.05 0.1
R
R
I
S
S
C
Figure 7. Noise Figure
, SOURCE RESISTANCE (OHMS)
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
500 1 k 2 k
500 1 k 2 k
0.2
= 10 mA
0.5
f = 10 Hz
10 mA
100 mA
10 kHz
1.0
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
3.0 mA
500 mA
1.0 mA
2.0
30 mA
300 mA
I
100 Hz
C
100 kHz
= 1.0 mA
100 mA
5.0
1.0 kHz
10 mA
10