BD139 ON Semiconductor, BD139 Datasheet - Page 2

• Manufacturer Part Number: BD139
• Description: TRANS NPN 1.5A 80V HPWR TO225AA
• Manufacturer: ON Semiconductor

Specifications of BD139

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.25W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: BD139OS

*Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
ELECTRICAL CHARACTERISTICS
Collector−Emitter Sustaining Voltage*
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage*
Base−Emitter On Voltage*
(I
(V
(V
(V
(I
(I
(I
(I
(I
C
C
C
C
C
C
CB
CB
BE
= 0.03 Adc, I
= 0.005 A, V
= 0.15 A, V
= 0.5 A V
= 0.5 Adc, I
= 0.5 Adc, V
= 5.0 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
CE
CE
B
CE
CE
= 2 V)
B
E
E
= 0.05 Adc)
C
= 2 V)
= 0)
= 0)
= 0, T
= 0)
= 2.0 Vdc)
= 2 V)
C
= 125_C)
Characteristic
10.0
0.05
0.02
0.01
5.0
2.0
1.0
0.5
0.1
(T
1
C
Figure 1. Active−Region Safe Operating Area
= 25_C unless otherwise noted)
T
J
= 125 C
V
2
CE
BD135, BD137, BD139
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
http://onsemi.com
5 ms
5
2
dc
10
0.5 ms
V
Symbol
BV
V
20
CE(sat)
BD135
BD137
BD139
BE(on)
I
I
h
CBO
EBO
CEO
FE
*
*
*
*
0.1 ms
50
BD 135
BD 137
BD 139
Type
80
Min
45
60
80
25
40
25
−
−
−
−
−
Max
250
0.1
0.5
10
10
−
−
−
−
−
1
mAdc
mAdc
UnIt
Vdc
Vdc
Vdc
−