MJF44H11 ON Semiconductor, MJF44H11 Datasheet

no-image

MJF44H11

Manufacturer Part Number
MJF44H11
Description
TRANS PWR NPN 10A 80V TO220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJF44H11

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
2W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJF44H11OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJF44H11
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJF44H11G
Manufacturer:
ON Semiconductor
Quantity:
1 500
MJF44H11 (NPN),
MJF45H11 (PNP)
Complementary
Power Transistors
For Isolated Package Applications
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 6
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Operating and Storage Junction
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Complementary power transistors are for general purpose power
Low Collector−Emitter Saturation Voltage −
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Pb−Free Packages are Available*
@ T
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
A
C
= 25°C
= 25°C
Characteristic
Rating
− Continuous
− Peak
V
CE(sat)
Preferred Devices
= 1.0 V (Max) @ 8.0 A
Symbol
Symbol
T
V
R
R
J
V
P
P
, T
CEO
I
qJC
qJA
EB
C
D
D
stg
−55 to 150
Value
0.288
0.016
Max
62.5
2.0
3.5
80
10
20
36
5
1
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
W
W
Preferred devices are recommended choices for future use
and best overall value.
SILICON POWER TRANSISTORS
MJF44H11
MJF44H11G
MJF45H11
MJF45H11G
Device
1
F4xH11 = Specific Device Code
G
A
Y
WW
80 VOLTS, 36 WATTS
2
ORDERING INFORMATION
3
MARKING DIAGRAM
http://onsemi.com
10 AMPERES
TO−220 FULLPACK
TO−220 FULLPACK
TO−220 FULLPACK
TO−220 FULLPACK
= Pb−Free Package
= Assembly Location
= Year
= Work Week
x = 4 or 5
(Pb−Free)
(Pb−Free)
F4xH11G
Package
ISOLATED TO−220
AYWW
Publication Order Number:
CASE 221D
STYLE 2
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
MJF44H11/D
Shipping

Related parts for MJF44H11

MJF44H11 Summary of contents

Page 1

... MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − ...

Page 2

... SINGLE PULSE 0.01 0.01 0.05 0.1 0. 25°C unless otherwise noted) C Symbol V MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 Z = r(t) R qJC( 1.56°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) C 0.2 0.5 1.0 2 ...

Page 3

... DUTY CYCLE ≤ 50% 1.0 0.5 0.3 0.2 MJF44H11/MJF45H11 0.1 1.0 2.0 3.0 5.0 7 COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 2. Maximum Rated Forward Bias Safe Operating Area 3.0 60 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown ...

Page 4

... T = 25° 0 COLLECTOR CURRENT (AMPS) C Figure 4. MJF44H11 DC Current Gain 1000 T = 125°C J 25°C 100 - 40° 0 COLLECTOR CURRENT (AMPS) C Figure 6. MJF44H11 Current Gain versus Temperature 1.2 1 0.8 0 25°C 0.4 J 0.2 V CE(sat COLLECTOR CURRENT (AMPS) C Figure 8. MJF44H11 On−Voltages ...

Page 5

... BSC 5.08 BSC Q 0.122 0.138 3.10 3.50 R 0.099 0.117 2.51 2.96 S 0.092 0.113 2.34 2.87 U 0.239 0.271 6.06 6.88 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJF44H11/D ...

Related keywords