MJE5852 ON Semiconductor, MJE5852 Datasheet - Page 7

• Manufacturer Part Number: MJE5852
• Description: TRANS PWR PNP 8A 400V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE5852

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 5V @ 3A, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 5A, 5V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MJE5852OS

The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
0.05
0.02
0.2
5.0
1.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
2.0
0.5
20
10
3.5
3.0
2.5
2.0
1.5
1.0
0.1
0
Figure 13. RBSOA, Maximum Reverse Bias
0
I
V
T
7.0
C
Figure 12. Maximum Forward Bias
BE(off)
J
/I
= 100°C
B
Figure 14. Peak Reverse Base Current
= 4
V
V
10
CE
CE
= 2 V to 8 V
25°C
T
V
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
I
T
C
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
C
B1
BE(off)
J
=
Safe Operating Area
Safe Operating Area
= 4 A
= 25°C
= 1 A
2
, BASE−EMITTER VOLTAGE (VOLTS)
20
MJE5850
MJE5851
MJE5852
200
dc
40
5 ms
4
70 100
300
MJE5850
MJE5851
MJE5852
MJE5850, MJE5851, MJE5852
1 ms
100 ms
200
400
6
300
http://onsemi.com
400
500
500
8
7
FORWARD BIAS
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found at
any case temperature by using the appropriate curve on
Figure 15.
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA
characteristics.
0.8
0.6
0.4
0.2
There are two limitations on the power handling ability of
The data of Figure 12 is based on T
T
For inductive loads, high voltage and high current must be
1
0
20
J(pk)
SAFE OPERATING AREA INFORMATION
Figure 15. Forward Bias Power Derating
may be calculated from the data in Figure 11. At
40
C
≥ 25_C. Second breakdown limitations do
DERATING
T
THERMAL
60
C
, CASE TEMPERATURE (°C)
80
SECOND BREAKDOWN
100
DERATING
C
120
= 25_C; T
140
C
J(pk)
− V
160
CE
is