MJD44H11-001 ON Semiconductor, MJD44H11-001 Datasheet - Page 3

TRANS PWR NPN 8A 80V STR DPAK

MJD44H11-001

Manufacturer Part Number
MJD44H11-001
Description
TRANS PWR NPN 8A 80V STR DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD44H11-001

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
85MHz
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJD44H11-001OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD44H11-001
Quantity:
6 000
0.05
0.02
0.5
0.3
0.1
20
10
5
3
2
1
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
1
1
0.01
SINGLE PULSE
0.02
0.05
D = 0.5
V
0.02 0.03 0.05
Figure 2. Maximum Forward Bias
CE
0.2
0.1
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
THERMAL LIMIT @ T
WIRE BOND LIMIT
3
Safe Operating Area
0.01
5
dc
7
0.1
5 ms
10
2.5
1.5
0.5
T
C
A
2
1
0
= 25°C
500 ms
T
25
20
15
10
0.2 0.3
5
0
C
25
20
30
100 ms
0.5
50
50
1 ms
Figure 1. Thermal Response
T
Figure 3. Power Derating
C
http://onsemi.com
SURFACE
70
MOUNT
1
T
T, TEMPERATURE (°C)
100
A
75
2
t, TIME (ms)
3
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
= 6.25°C/W MAX
- T
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
= r(t) R
100
C
5
= P
qJC
(pk)
1
q
10
JC(t)
125
J(pk)
20
may be calculated from the data in
30
150
P
50
(pk)
DUTY CYCLE, D = t
t
1
100
t
2
J(pk)
200 300
= 150_C; T
1
/t
2
500
C
− V
J(pk)
C
1 k
CE
is

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